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This project demonstrates the **design of a 6-Transistor (6T) SRAM memory cell** using the **Electric VLSI Design System**. It includes only the **schematic and layout**—simulation and waveform outputs are not included in this repository.

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DuttPanchal04/6t-sram-cell-cmos-design-electric-vlsi-tool

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🧠 6T SRAM Cell Design – Schematic & Layout (Electric VLSI Free Tool)

This project demonstrates the design of a 6-Transistor (6T) SRAM memory cell using the Electric VLSI Design System. It includes only the schematic and layout—simulation and waveform outputs are not included in this repository.


📌 Project Overview

A 6T SRAM cell is the fundamental memory element used in static RAM chips. It consists of:

  • 2 cross-coupled CMOS inverters (4 transistors total: 2 NMOS, 2 PMOS)
  • 2 NMOS access transistors, controlled by a wordline
  • 2 complementary bitlines for read/write operations

This project focuses on:

  • Creating a schematic that properly represents the internal structure of the 6T cell.
  • Developing a clean layout with proper DRC-clean rules using Electric VLSI.
  • Ensuring correct connectivity and transistor sizing for stable operation.

🧰 Tools Used

Tool Purpose
Electric VLSI Schematic & Layout Editing
Ubuntu 20.04+ Development Environment

🔗 Electric VLSI GitHub - Download and Installation Guide


📂 Folder Structure

SRAM_CELL/
├── schematic (.png)
├── layout (.png)
└── project library ( .jelib )

🧑‍💻 Design Details

➤ Schematic

  • Tool: Electric VLSI
  • Transistor Count: 6 (2 PMOS, 4 NMOS)
  • Design Notes:
    • Access transistors are controlled via the Wordline.
    • Data read/write via Bitline and Bitline_Bar.
    • Internal state stored between nodes Q and Q_Bar.

6T SRAM CELL CMOS CIRCUIT DESIGN

➤ Layout

  • Created in Electric VLSI using custom standard cells.
  • Connections match schematic 1:1 (DRC clean).
  • DRC/LVS/ERC passed successfully.

6T SRAM CELL CMOS LAYOUT DESIGN


📏 Transistor Sizing

Transistor Type Width (W) Notes
PMOS 5 λ Sufficient for pull-up strength
NMOS 10 λ Stronger pull-down path

λ = Lambda unit (technology dependent)

These values ensure cell stability during read and write operations for a basic technology node.


📝 How to View the Project

  1. Install Electric VLSI from the GitHub repo or a Linux package manager.
  2. Open Electric VLSI.
  3. Use File → Open Library → project.jelib .
  4. Navigate through the hierarchy and explore both schematic and layout designs.

🛠️ Features Implemented

  • ✅ 6T SRAM Schematic with labeled signals: Q, Q_BAR, BITLINE, BITLINE_BAR, WORDLINE
  • ✅ CMOS Inverter pairs + access transistors
  • ✅ DRC-clean layout (manual routing)
  • ✅ LVS ( Layout vs Schematic ) passed successfully.
  • ✅ ERC passed.
  • ✅ Technology-independent design (lambda-based)

📣 Author

Dutt Panchal
Electronics & Communication Engineering Student 💼 Final Year | VLSI Design Enthusiast | Electric VLSI + Open-Source Tools


📌 Future Improvements

  • Add waveform simulation (read/write testbench)
  • Perform LVS and extraction
  • Explore array-level integration for multi-bit SRAM
  • Port design to Sky130 or other PDKs for fabrication-ready flow

📎 License

This project is open-source and free to use for educational and academic purposes.
Feel free to fork, modify, and contribute!


⭐️ If you found this helpful or interesting, drop a star on GitHub and connect on LinkedIn!

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This project demonstrates the **design of a 6-Transistor (6T) SRAM memory cell** using the **Electric VLSI Design System**. It includes only the **schematic and layout**—simulation and waveform outputs are not included in this repository.

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